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Semiconductor Electronic: Material, Devices And Simple Circuits — Physics STD 12 Science — Question

Gujarat BoardEnglish MediumSTD 12 SciencePhysicsSemiconductor Electronic: Material, Devices And Simple Circuits1 Mark
MCQ
Diffusion current in a p-n junction is greater than the drift current in magnitude:
  • A
    If the junction is forward-biased.
  • B
    If the junction is reverse-biased.
  • C
    If the junction is unbiased.
  • D
    In no case.
✓

Answer

  1. If the junction is forward-biased.

Explanation:

In the forward biassing of a p−n junction, the positive terminal of the battery is connected to the p side of the p−n junction and the negative terminal of the battery is connected to the n side of the p−n junction. As a result, electrons in the n side of the p−n junction are repelled by the negative terminal of the battery and move to the p side, where the positive terminal of the battery attracts the electrons. Similarly, holes from the p side of the p−n junction are repelled by the positive terminal of the battery and move to the nside, where the negative terminal of the battery attracts the holes. Thus, they give diffusion current across the p−n junction.

In case of reverse biassing, no conduction takes place across the junction because of the diffusion of majority carriers. Hence, there is no diffusion current.

If the junction is unbiased, then diffusion current is initially maximum. But at equilibrium, diffusion current becomes equal to drift current.

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