Question
Explain the terms ‘depletion layer’ and ‘potential barrier’ in a $p-n$ junction diode. How are the $(a)$ Width of depletion layer, and $(b)$ Value of potential barrier affected when the $p-n$ junction is forward biased?
✓
Answer
Depletion layer : It is a layer of immobile ions formed near the $p-n$ junction by diffusion of majority charge carriers and electron$-$hole recombination.
Potential barrier : It is the potential difference developed across the junction when diffusion current $\&$ drift current attains equilibrium across the junction.
Potential barrier : It is the potential difference developed across the junction when diffusion current $\&$ drift current attains equilibrium across the junction.
- When forward biased, width of depletion layer decreases.
- And value of barrier potential also reduces as $v_0 - v.$
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