GaAs is
|
(a) Element semiconductor |
(b) Alloy semiconductor |
|
(c) Bad conductor |
(d) Metallic semiconductor |
GaAs is
|
(a) Element semiconductor |
(b) Alloy semiconductor |
|
(c) Bad conductor |
(d) Metallic semiconductor |
(b) Alloy semiconductor
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The radioactivity of a certain radioactive element drops to 1/64 of its initial value in 30 seconds. Its half life is
|
(a) 2 seconds |
(b) 4 seconds |
(c) 5 seconds |
(d) 6 seconds |
A primary cell has an e.m.f. of 1.5 volts, when short-circuited it gives a current of 3 amperes. The internal resistance of the cell is
|
(a) 4.5 ohm |
(b) 2 ohm |
(c) 0.5 ohm |
(d) 1/4.5 ohm |
All six capacitors shown are identical, Each can withstand maximum 200 volts between its terminals. The maximum voltage that can be safely applied between A and B is
|
(a) 1200 V |
(b) 400 V |
(c) 800 V |
(d) 200 V |

The figure shows a circuit diagram of a ‘Wheatstone Bridge’ to measure the resistance G of the galvanometer. The relation will be satisfied only when
|
(a) The galvanometer shows a deflection when switch S is closed |
|
(b) The galvanometer shows a deflection when switch S is open |
|
(c) The galvanometer shows no change in deflection whether S is open or closed |
|
(d) The galvanometer shows no deflection |
The distance between the extreme points on the periphery of the mirror is called: