- AIt is associated with two type of hybridization of central atoms
- BIt is planar compound as a whole
- ✓$N-Si$ bond length is less than single bond
- DIt is weaker base than $NH_3$
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${A_{\left( s \right)}} + {B^ \oplus } \longrightarrow {A^ \oplus } + {B_{\left( s \right)}}\,;\,\Delta {H^o} = - 551.5\,KJ$ Calculate standard electrode potential of cell (in $volt$). .......... $\mathrm{volt}$
Reason : There is delocalisation of electrons from filled $d$ orbitals into the empty orbitals on the $CO$ ligands.
$1.$ The succeeding operations that enable this transformation of states are
$(A)$ Heating, cooling, heating, cooling
$(B)$ Cooling, heating, cooling, heating
$(C)$ Heating, cooling, cooling, heating
$(D)$ Cooling, heating, heating, cooling
$2.$ The pair of isochoric processes among the transormation of states is
$(A)$ $K$ to $L$ and $L$ to $M$
$(B)$ $L$ to $M$ and $N$ to $K$
$(C)$ $L$ to $M$ and $M$ to $N$
$(D)$ $M$ to $N$ and $N$ to $K$
Give the answer question $1$ and $2.$