- Both A and R are true and R is the correct explanation of A.
- Both A and R are true but R is not the correct explanation of A.
- A is true but R is false.
- A is false and R is also false.
Reason: In reversed biased, the depletion layer is reduced.
Explanation:
A small increase in forward voltage across p-n junction shows large increase in forward current. Hence the resistance $\Big(=\frac{\text{Voltege}}{\text{Current}}\Big)$ 0f p-n junction is low when forward biased. Also the width of depletion layer of p-n junction decreases in forward bias.
A large increase in reverse voltage across p-n shows small increase in reverse current. Hence the resistance of p-n junction is high when reverse biased. Also the width of the depletion layer of p-n junction increases in reverse biased.
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Assertion (A): Between any two given energy levels, the number of absorption transitions is always less than the number of emission transitions.
Reason (R): Absorption transitions start from the lowest energy level only and may end at any higher energy level. But emission transitions may start from any higher energy level and end at any energy level below it.