Question types

Semiconductor Electronics: Materials, Devices and Simple Circuits question types

89 questions across 6 question groups — pick any mix to generate a Physics paper with step-by-step answer keys.

89
Questions
6
Question groups
5
Question types
Sample Questions

Semiconductor Electronics: Materials, Devices and Simple Circuits questions

One sample from each question group in this chapter. Select any group above to see the full set with answer keys.

Q 2M.C.Q [1M]1 Mark
When a forward bias is applied to a p-n junction, it
  • A
    raises the potential barrier.
  • B
    reduces the majority carrier current to zero.
  • lowers the potential barrier.
  • D
    None of the above.

Answer: C.

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Q 3M.C.Q [1M]1 Mark
In an unbised p-n junction, holes diffuse from the p-region to n-region because
  • A
    free electrons in the n-region attract them.
  • B
    they move across the junction by the potential difference.
  • hole concentration in p-region is more as compared to n-region.
  • D
    All the above.

Answer: C.

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Q 4M.C.Q [1M]1 Mark
Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to $\left(E_g\right)_C,\left(E_g\right)_{S i}$ and $\left(E_g\right)_{G e}$. Which of the following statements is true?
  • A
    $\left( E _{ g }\right)_{ Si }<\left( E _{ g }\right)_{ Ge }<\left( E _{ g }\right)_{ C }$
  • B
    $\left( E _{ g }\right)_{ C }<\left( E _{ g }\right)_{ Ge }>\left( E _{ g }\right)_{ Si }$
  • $\left( E _{ g }\right)_{ C }>\left( E _{ g }\right)_{ Si }>\left( E _{ g }\right)_{ Ge }$
  • D
    $\left( E _{ g }\right)_{ C }=\left( E _{ g }\right)_{ Si }=\left( E _{ g }\right)_{ Ge }$

Answer: C.

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Q 5M.C.Q [1M]1 Mark
In an n-type silicon, which of the following statement is true :
  • A
    Electrons are majority carriers and trivalent atoms are the dopants.
  • B
    Electrons are minority carriers and pentavalent atoms are the dopants.
  • Holes are minority carriers and pentavalent atoms are the dopants.
  • D
    Holes are majority carriers and trivalent atoms are the dopants.

Answer: C.

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What is meant by rectification? Draw a diagram of a half wave rectifier electric circuit. Write a brief description of its working. Draw the waveforms of input voltage and output voltage for this rectifier circuit.
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What is meant by forward bias and reverse bias of p-n junction diode? Draw experimental electrical circuit diagram to study V-I characteristic in forward bias and reverse bias of p-n junction diode. Draw forward bias and reverse bias V-I characteristic curves of p-n junction diode and briefly explain the following :
(i) Threshold or cut-in voltage
(ii) Breakdown voltage.
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