A semiconductor X is made by doping a germanium crystal with arse… - Vidyadip

MCQ

A semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z = 33)$. $A$ second semiconductor $Y$ is made by doping germanium with indium $(Z = 49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct

A
$X$ is $P-$type, $Y$ is $N-$type and the junction is forward biased
B
$X$ is $N-$type, $Y$ is $P-$type and the junction is forward biased
C
$X$ is $P-$type, $Y$ is $N-$type and the junction is reverse biased
✓
$X $ is $N-$type, $Y$ is $P-$type and the junction is reverse biased

✓

Answer

Correct option: D.

$X $ is $N-$type, $Y$ is $P-$type and the junction is reverse biased

d
(d)Arsenic has five valence electrons, so it a donor impurity. Hence $X$ becomes $N-$type semiconductor. Indium has only three outer electrons, so it is an acceptor impurity. Hence $Y$ becomes $P-$ type semiconductor. Also $N$ $(i.e.\, X)$ is connected to positive terminal of battery and $P(i.e\, Y)$ is connected to negative terminal of battery so $PN-$junction is reverse biased.

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