- AThermally generated charge carriers
- BMinority charge carriers
- CCollision generated charge carriers
- DIons
Explanation:
When the reverse bias breakdown voltage is exceeded, a conventional diode is subject to high current due to avalanche breakdown.
Avalanche breakdown occurs in reverse bias when the applied voltage is high enough, the free electron may move fast enough to knock other electrons free, creating more free-electron-hole pairs (i.e., more charge carriers), increasing the current.
Thus, the current flow in a Zener diode is mainly due to collision generated charge carriers.
Generate a complete, print-ready paper with questions like this in minutes — across 16+ boards, with answer keys.
In Thomson's experiment if the value of q/m is the same for all positive ions striking the photographic plate, then the trace would be
|
(a) Straight line |
(b) Parabolic |
(c) Circular |
(d) Elliptical |
By a cell a current of 0.9 A flows through 2 ohm resistor and 0.3 A through 7 ohm resistor. The internal resistance of the cell is
|
(a) 0.5 Ω |
(b) 1.0 Ω |
(c) 1.2 Ω |
(d) 2.0 Ω |
The temperature (T) dependence of resistivity (r) of a semiconductor is represented by
|
(a)
|
(b)
|
(c)
|
|
The activity of a radioactive sample is 1.6 curie and its half-life is 2.5 days. Its activity after 10 days will be
|
(a) 0.8 curie |
(b) 0.4 curie |
(c) 0.1 curie |
(d) 0.16 curie |
Variation of current passing through a conductor as the voltage applied across its ends as varied is shown in the adjoining diagram. If the resistance (R) is determined at the points A, B, C and D, we will find that
|
(a) RC = RD |
(b) RB > RA |
(c) RC > RB |
(d) None of these |